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ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
FEATURES
* * * * * * * * * * * Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level
RoHS
COMPLIANT
TO-200AB (E-PUK)
PRODUCT SUMMARY
IT(AV) 720 A
TYPICAL APPLICATIONS
* * * * Inverters Choppers Induction heating All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) TEST CONDITIONS VALUES 720 Ths 55 1435 Ths 50 Hz 60 Hz 50 Hz 60 Hz 25 11 000 11 500 605 553 400 to 800 Range 10 to 30 - 40 to 125 UNITS A C A C A
IT(RMS) ITSM I2 t VDRM/VRRM tq TJ
kA2s V s C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 08 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50
ST333C..C
Document Number: 94376 Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
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ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage VR Voltage before turn-on VD Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit
1630 1630 1350 720 50 VDRM 50 40 10/0.47
1420 1390 1090 550
2520 2670 2440 1450 50 VDRM -
2260 2330 2120 1220
7610 4080 2420 1230 50 VDRM -
6820 3600 2100 1027 V A/s 55 10/0.47 C /F A
55
40 10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 mls Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 720 (350) 55 (75) 1435 11 000 11 500 9250 Sinusoidal half wave, initial TJ = TJ maximum 9700 605 553 428 391 6050 1.96 0.91 0.93 0.58 0.58 600 1000 m V kA2s kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A
Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
mA
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Document Number: 94376 Revision: 30-Apr-08
ST333CPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 1.1 10 30 s UNITS A/s
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.09 0.04 0.020 0.010 9800 (1000) 83 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C
Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style
RthC-hs
TO-200AB (E-PUK)
Document Number: 94376 Revision: 30-Apr-08
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ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.010 0.012 0.015 0.022 0.036 DOUBLE SIDE 0.011 0.012 0.015 0.022 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.007 0.012 0.016 0.023 0.036 DOUBLE SIDE 0.007 0.013 0.017 0.023 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Heatsink T emperature (C)
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 100 200 300 400 500 600 Average On-s tate Current (A) 30 60 90 120 180
Conduction Angle
130 120 110 100 90 80 70 60 50 40 30 20 10 0 200 30
S 333C..C S T eries (S ingle S ide Cooled) RthJ-hs(DC) = 0.09 K/ W
S 333C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.04 K/ W
Conduction Angle
60 90 120 400 600 800 180 1000
Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (C)
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 30 60 90 120 180 DC
Conduction Period
130 120 110 100 90 80 70 60 50 40 30 20 0 30 60
S 333C..C S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.09 K/ W
S 333C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.04 K/ W
Conduction Period
90 120 180 DC 200 400 600 800 1000 1200 1400 1600 Average On-state Current (A)
0 100 200 300 400 500 600 700 800 900 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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Document Number: 94376 Revision: 30-Apr-08
ST333CPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
Maximum Average On-s tate Power Loss(W)
ine Peak Half S Wave On-state Current (A)
2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 Average On-state Current (A)
Conduction Angle
12000
180 120 90 60 30
RMS Limit
Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control 11000 Of Conduction May Not Be Maintained. Initial T = 125C J 10000 No Voltage Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 S 333C..C S T eries
S 333C..C S T eries T = 125C J
4000 0.01
0.1 Pulse T rain Duration (s)
1
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
10000 Instantaneous On-state Current (A)
Maximum Average On-s tate Power Loss (W)
2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0
DC 180 120 90 60 30
RMS Limit
T = 25C 1000
J
T = 125C
J
Conduction Period
S 333C..C S T eries T = 125C J 200 400 600 800 1000 12001400 1600 Average On-state Current (A)
S 333C..C S T eries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous On-state Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
9500 9000 8500 8000 7500 7000 6500 6000 5500 5000 4500 1
At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
T ransient T hermal Impedance Z thJ-hs (K/ W)
Peak Half S Wave On-state Current (A) ine
10000
0.1 S 333C..C S T eries
0.01
S teady S tate Value R thJ-hs = 0.09 K/ W (S ingle S ide Cooled) R thJ-hs = 0.04 K/ W (Double S Cooled) ide (DC Operation)
S 333C..C S T eries
10
100
0.001 0.001
0.01
0.1
1
10
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
S quare Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94376 Revision: 30-Apr-08
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
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ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
Maximum R everse R overy Current - Irr (A) ec 180 160 140 120 100 80 60 40 20 10 20 S 333C..C S T eries T = 125 C J
IT = 500 A M 300 A 200 A 100 A 50 A
Maximum R everse R overy Charge - Qrr (C) ec
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 S 333C..C S T eries T = 125 C J
IT = 500 A M 300 A 200 A 100 A 50 A
50 60 70 80
90 100
30 40 50 60
70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
R ate Of Fall Of Forward Current - di/ dt (A/ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
1E 4
Peak On-state Current (A)
1000 1500
500
400 200 100
50 Hz
1000 1500
500
400
200
100
50 Hz
1E 3
2500 3000 5000
S nubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM
2500 3000 5000 tp
S nub b er circuit Rs = 10 ohms Cs = 0.47 F V D = 80% V DRM S 333C..C S T eries S inusoida l pulse T = 55C C
tp
S 333C..C S T eries S inusoid a l pulse T = 40C C
1E 2 1E1
1E2
1E 3
1E4
1E 1
1E2
1E3
1E 4
Pulse Basewid th (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
S nub ber c irc uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM
Peak On-sta te Current (A)
1000 500
400 200 100
50 Hz
1000 500 1500 2000 2500 3000
400 200
100 50 Hz
1E3
1500 2000 2500 3000
S nub b er circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 333C..C S T eries T pezoida l pulse ra T = 40C C di/ dt = 50A/ s
5000 tp
5000
tp
S 333C..C S T eries T ezoid al pulse rap T = 55C C di/ dt = 100A/ s
1E2 1E1
1E2
1E3
1E4
1E1
1E 2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Frequency Characteristics
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Document Number: 94376 Revision: 30-Apr-08
ST333CPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A
1E4
Peak On-state Current (A)
S nubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% V DRM
500 1000 400 200 100 50 Hz
400 200 100 500 1000 1500 2000 2500 3000 tp
50 Hz
1E3
1500 2000 2500 3000
S nubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 333C..C S T eries T ezoida l p ulse rap T = 40C C di/ dt = 100A/ s
5000 tp
5000
S 333C..C S T eries T ezoid al pulse rap T = 55C C di/ d t = 100A/ s
1E2 1E 1
1E2
1E3
1E 4 4 1E
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 15 - Frequency Characteristics
1E4
3 2 1 5 10
20 joules per p ulse
S 333C S T eries Recta ngula r p ulse tp d i/ d t = 50A/ s 3 2 1 0.5
20 joules p er pulse 10 5
Peak On-state Current (A)
1E3
0.5 0.3 0.2
0.4 0.3
1E2
0.2
S 333C..C S T eries S inusoid al pulse tp
1E1 1E1
1E 2
1E 3
1E4
1E 1
1E2
1E3
1E 4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 333C..C S T eries F requency Limited by PG(AV) 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94376 Revision: 30-Apr-08
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ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 720 A
ORDERING INFORMATION TABLE
Device code
ST
1
1 2 3 4 5 6 7 8 9
33
2 -
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
P
11
Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = Puk case TO-200AB (E-PUK) Reapplied dV/dt code (for tq test condition)
dV/dt - tq combinations available 400 HL HP HK HJ HH
dV/dt (V/s) 20 50 100 200 10 CN DN EN CM DM EM FM* 12 tq code 15 CL DL EL FL* tq (s) CP DP EP FP 18 0 = Eyelet terminals CK DK EK FK 20 (gate and auxiliary cathode unsoldered leads) FJ 25 30 1 = Fast-on terminals * Standard part number. (gate and auxiliary cathode unsoldered leads) All other types available only on request. 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
10
-
Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection)
11
-
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075
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Document Number: 94376 Revision: 30-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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